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Heterostructure Injector Laser, Semiconductor Amplifying Element and a Semiconductor Optical Amplifier

机译:异质结构注入激光器,半导体放大元件和半导体光放大器

摘要

heterostructure , the fiber-optic telecommunications and data communications systems, optical high-speed computing and switching systems , medical equipment, laser industrial equipment, injection is used in the laser frequency doubling of laser development , is used in the semiconductor amplifier , the manufacture of semiconductor injection emission source such as a semiconductor optical amplifier , and the pumping of fiber amplifiers and lasers in solid state . Heterostructure , the injection laser , the semiconductor amplifying device , and proposes a semiconductor optical amplifier , whose basic feature is in the modernization of the active region of the heterostructure and nuip area , and selecting a combination of location , compositions , refractive index and thickness of the heterostructure layers laser injection to the transient region can be formed can be controlled by the emission leak from the active layer , and to provide effective operation of the semiconductor amplifying element and semiconductor optical amplifier .
机译:异质结构,光纤电信和数据通信系统,光学高速计算和交换系统,医疗设备,激光工业设备,注入用于激光开发中的激光倍频,用于半导体放大器,制造半导体注入发射源,如半导体光放大器,以及泵浦固态的光纤放大器和激光器。异质结构,注入激光器,半导体放大装置,并提出了一种半导体光放大器,其基本特征是对异质结构和核区域的有源区进行现代化,并选择硅的位置,组成,折射率和厚度的组合通过有源层的发射泄漏可以控制形成注入过渡区的异质结构层,并提供半导体放大元件和半导体光放大器的有效操作。

著录项

  • 公开/公告号KR101021726B1

    专利类型

  • 公开/公告日2011-03-15

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20077012334

  • 发明设计人 쉐베이킨 바실리 이바노비치;

    申请日2005-11-15

  • 分类号H01S5/34;H01S5/32;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:27

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