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monomer , a resin and a method for manufacturing a semiconductor device using the resist composition , the resin composition using the registry and seven days

机译:单体,树脂和使用该抗蚀剂组合物的半导体器件的制造方法,该树脂组合物使用配剂和7天

摘要

The present invention without impairing the transparency or acid-reactive required for resist, dissolution, causing contamination of the device and that there is a risk of degassing and to provide a monomer as a constituent of the resin and the resin containing sulfonium salt as a side chain containing a small side chain for the purpose of generating acid. ; to being represented by formula (1) The monomer of ; st32: che xmlns: st32 = "http://alexandria.fairviewresearch.com/ns/st32/" /st32: che ; In Formula 1, R 1 and R 3 is either -H groups and -CH 3 group, may be different from each well using the same. In Formula 1, R 2 represents either a phenyl group and an adamantyl group. In Formula 1, Q 1 represents a perfluoroalkyl group having a carbon number of 1~4.
机译:本发明不会损害抗蚀剂的溶解性,溶解性,器件污染所需要的透明性或酸反应性,并且存在脱气的风险并且提供单体作为树脂的组成部分以及提供含有containing盐的树脂作为侧面的本发明。为了产生酸的目的,含有小的侧链的链。 ;由式(1)表示; ;在式1中,R 1 和R 3 是-H基团和-CH 3 基团,使用相同的孔可能有所不同。在式1中,R 2 表示苯基和金刚烷基。式1中,Q 1 表示碳原子数为1〜4的全氟烷基。

著录项

  • 公开/公告号KR101047372B1

    专利类型

  • 公开/公告日2011-07-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090006600

  • 发明设计人 노자키 코지;

    申请日2009-01-28

  • 分类号C07D335/06;C07D335/02;

  • 国家 KR

  • 入库时间 2022-08-21 17:50:04

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