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THE METHOD OF HIGHLY CONDUCTIVE QUANTUM DOT FILM AND HIGHLY CONDUCTIVE QUANTUM DOT FILM PREPARED THEREBY

机译:高导电量子点膜的方法及由此制备的高导电量子点膜的方法

摘要

PURPOSE: A highly conductive quantum dot film provides electric component improving performance by reducing a surface defect according to change the surface of the film. CONSTITUTION: A conductivity quantum dot is manufactured. The conductivity quantum dot is coated in substrate. The ligand between the conductivity quantum dot is exchanged. The substrate in which the conductivity quantum dot is coated is treated by heating to the temperature of 40~70°C in the inert atmosphere. The substrate which is treated by heating is changed to the ligand.
机译:目的:高导电性的量子点薄膜可通过减少薄膜表面的变化来减少表面缺陷,从而提高电子元件的性能。组成:制作了一个导电量子点。电导率量子点涂覆在衬底中。导电量子点之间的配体被交换。通过在惰性气氛中加热至40〜70℃的温度来处理其中涂覆有导电性量子点的基板。通过加热处理的基材变为配体。

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