III-NITRIDE RADIATING INSTRUMENTS GROWED ON PATTERNS TO REDUCE DEFORMATION

摘要

1. The device containing the III-nitride structure containing the first layer 22, and this first layer practically does not contain indium, the second layer 26 grown on top of the first layer, and this second layer is a non-monocrystalline layer containing indium, and the device layers 10 grown on top of the second layer, these device layers containing an III-nitride light emitting layer located between the n-type region and the p-type region. ! 2. The device according to claim 1, in which the first layer 22 is GaN, and the second layer 26 is InGaN. ! 3. The device according to claim 1, in which the III-nitride structure further comprises a third layer 22 located between the first layer 22 and the second layer 26, and this third layer is a non-monocrystalline layer, practically free of indium. ! 4. The device according to claim 1, in which the III-nitride structure further comprises a third layer 26 located between the second layer 26 and the light-emitting layer, and this third layer is a non-monocrystalline layer containing indium. ! 5. The device according to claim 4, in which the second layer 32 has a different indium content than the third layer 34.! 6. The device according to claim 1, additionally containing a layer 35 with a gradient composition located between the light-emitting layer and the first layer. ! 7. The device according to claim 1, in which! the light-emitting layer has a volumetric lattice constant and a volume corresponding to the lattice constant of a free-standing material with the same composition as that of the light-emitting layer! the light-emitting layer has a planar lattice constant of the aplost, corresponding to the lattice constant of the light-emitting layer grown in the above-mentioned structure, and! | (aploskost-volume) | / volume in the light-emitting layer