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METHOD OF MEASURING NANO-SIZED CONDUCTING SURFACE RELIEF WITH PHOTON ULTIMATE ANALYSIS OF MATERIAL
METHOD OF MEASURING NANO-SIZED CONDUCTING SURFACE RELIEF WITH PHOTON ULTIMATE ANALYSIS OF MATERIAL
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机译:材料光子极限分析的纳米化导电表面起伏测量方法
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摘要
FIELD: physics.;SUBSTANCE: proposed method comprises defining 3D profile of semiconductor or metal surface on bringing probe with metal tip thereto along vertical coordinate Z. Note here that surface under probe nano-tip is irradiated by optical radiation with wavelength from IR to UV with constant spectral power of radiation. Wavelength λb corresponding to abrupt increase in tunnel current is recorded to determine semiconductor or metal material by power width of semiconductor forbidden zone Eg or work function of electrons A from metal at surface local area defined by probe nano-tip from relation Eg=1238/λb, A=1238/λb, where λb is boundary wavelength in nm; Eg, A is forbidden zone width for probed semiconductor or work function for metal in eV for given surface point.;EFFECT: contactless measurement of ultimate composition.;1 dwg
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机译:领域:物理;实质:所提出的方法包括在将带有金属尖端的探针沿垂直坐标Z引入到半导体或金属表面时定义半导体或金属表面的3D轮廓。请注意,探针纳米尖端下方的表面受到波长从IR到UV的光辐射的照射具有恒定的辐射光谱功率。记录对应于隧道电流突然增加的波长λb,以通过半导体禁区E g Sub>的功率宽度或探针纳米级定义的表面局部区域中来自金属的电子A的功函数确定半导体或金属材料。由关系E g Sub> = 1238 /λb,A = 1238 /λ b Sub>求得的尖端,其中λ b Sub>是以nm为单位的边界波长; E g Sub>,对于给定的表面点,A是所探测的半导体的禁区宽度或eV中金属的功函数。;效果:最终组成的非接触式测量。1dwg
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