The device of the nitriding by ionic implantation of a piece of a shape memory alloy of nickel and titanium process employing such a device.

摘要

Device for implanting ions into a nickel-titanium shape memory alloy part comprises an electron cyclotron resonance source and a control system for producing a beam of multi-energy ions which are implanted into the part at a temperature below the annealing temperature of the alloy, the ions being implanted simultaneously to a depth controlled by the extraction voltage of the source. Independent claims are also included for: (1) treatment of a nickel-titanium shape memory alloy part by ion implantation using a device as above, where the multi-energy ion beam moves at a constant speed relative to the part; (2) treatment of a nickel-titanium shape memory alloy part by ion implantation using a device as above, where the multi-energy ion beam moves relative to the part at a variable speed taking into account the angle of incidence of the ion beam.