首页> 外国专利> PLANE EMISSION LASER ELEMENT, PLANE EMISSION LASER ARRAY, AND MANUFACTURING METHOD, OPTICAL SCANNER AND IMAGE FORMATION APPARATUS USING THE SAME, AND OPTICAL TRANSCEIVER MODULE, OPTICAL COMMUNICATION DEVICE, AND ELECTRICAL APPARATUS

PLANE EMISSION LASER ELEMENT, PLANE EMISSION LASER ARRAY, AND MANUFACTURING METHOD, OPTICAL SCANNER AND IMAGE FORMATION APPARATUS USING THE SAME, AND OPTICAL TRANSCEIVER MODULE, OPTICAL COMMUNICATION DEVICE, AND ELECTRICAL APPARATUS

机译:平面发射激光元件,平面发射激光阵列和制造方法,使用其的光学扫描仪和图像形成装置以及光学收发器模块,光学通信装置和电气装置

摘要

PROBLEM TO BE SOLVED: To provide a high quality plane emission laser by enhancing the yield in the manufacturing process.;SOLUTION: The plane emission laser element 1 has a semiconductor layer 1e containing aluminum consisting of a first semiconductor multilayer film (a lower semiconductor DBR1b), an active layer 1c, and a second semiconductor multilayer film (an upper semiconductor DBR1d) on a substrate 1a composed of a material not containing aluminum. A first isolation trench 1f is formed by etching the semiconductor layer 1e to a depth reaching the substrate 1a, a protective film 1g is formed on the semiconductor layer 1e, a second isolation trench 1i is formed by etching the substrate 1a in the center of the first isolation trench 1f down to a predetermined depth, and then the semiconductor layer 1e is separated along the second isolation trench 1i.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:通过提高制造过程中的成品率来提供高质量的平面发射激光器。解决方案:平面发射激光器元件1具有包含铝的半导体层1e,该半导体层1e由第一半导体多层膜(下部半导体DBR1b)组成),有源层1c和在由不含铝的材料构成的基板1a上的第二半导体多层膜(上部半导体DBR1d)。通过蚀刻半导体层1e至到达衬底1a的深度来形成第一隔离沟槽1f,在半导体层1e上形成保护膜1g,通过在半导体层1e的中心处蚀刻衬底1a来形成第二隔离沟槽1i。首先将第一隔离沟槽1f降至预定深度,然后沿第二隔离沟槽1i分离半导体层1e。版权所有:(C)2013,JPO&INPIT

著录项

  • 公开/公告号JP2012195431A

    专利类型

  • 公开/公告日2012-10-11

    原文格式PDF

  • 申请/专利权人 RICOH CO LTD;

    申请/专利号JP20110058003

  • 发明设计人 NUMATA MASAYUKI;

    申请日2011-03-16

  • 分类号H01S5/183;B41J2/44;G02B26/10;

  • 国家 JP

  • 入库时间 2022-08-21 17:44:55

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