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EXCESSIVE INPUT PROTECTION CIRCUIT, AND EXCESSIVE INPUT PROTECTION METHOD

机译:过度输入保护电路和过度输入保护方法

摘要

PROBLEM TO BE SOLVED: To protect a circuit without deteriorating a high frequency characteristic even when a protection circuit is damaged by an excessive input in a monolithic microwave integrated circuit for receiving high frequency signals.SOLUTION: An excessive input protection circuit 11 has plural stages of anti-parallel diodes 21a and 21b, and each stage of FETs 22a and 22b. The anti-parallel diodes 21a and 21b actuate as excessive input protection elements. The FETs 22a and 22b actuate as switching elements for connecting or disconnecting each stage of the anti-parallel diodes 21a and 21b between a high frequency transmission line 13 and a ground. When the anti-parallel diode 21a is damaged, the FET 22a has a high impedance and the FET 22b has a low impedance. Instead of a first stage of the anti-parallel diode 21a, the next stage of the anti-parallel diode 21b functions as an excessive input protection element.
机译:要解决的问题:即使在用于接收高频信号的单片微波集成电路中输入过多而损坏保护电路时,也要保护电路而不会恶化高频特性。解决方案:输入过多的保护电路11具有多个阶段反并联二极管21a和21b,以及FET 22a和22b的每一级。反并联二极管21a和21b作为过多的输入保护元件而动作。 FET 22a和22b作为开关元件致动,用于在高频传输线13和地之间连接或断开反并联二极管21a和21b的每一级。当反并联二极管21a损坏时,FET 22a具有高阻抗,而FET 22b具有低阻抗。代替反并联二极管21a的第一级,反并联二极管21b的下一级用作过多的输入保护元件。

著录项

  • 公开/公告号JP2012199747A

    专利类型

  • 公开/公告日2012-10-18

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP20110062111

  • 发明设计人 WADA YASUSHI;

    申请日2011-03-22

  • 分类号H04B1/18;H03F1/52;

  • 国家 JP

  • 入库时间 2022-08-21 17:44:51

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