MEMORY CIRCUIT USING SPIN MOSFET, PATH TRANSISTOR CIRCUIT WITH MEMORY FUNCTION, SWITCHING BOX CIRCUIT, SWITCHING BLOCK CIRCUIT, AND FIELD PROGRAMMABLE GATE ARRAY

摘要

PROBLEM TO BE SOLVED: To provide a high-speed, non-volatile and low-power consumption memory circuit.SOLUTION: A memory circuit has: a first conductivity type spin MOSFET 10 whose one source/drain is connected with a node 40; a first conductivity type spin MOSFET or a first conductivity type MOSFET 12 whose one source/drain is connected with the node 40; a p-channel spin MOSFET or a p-channel MOSFET 14 whose gate electrode is connected with the node 40 and whose one source/drain electrode is connected with an output terminal 37; an n-channel spin MOSFET or an n-channel MOSFET 16 whose gate electrode is connected with the node 40 and whose one source/drain electrode is connected with the output terminal 37; and the output terminal 37. The third transistor 14 and the fourth transistor 16 configure an inverter circuit. At least one of the third transistor 14 and the fourth transistor 16 is a spin MOSFET. An inverter circuit is outputted via the output terminal 37.