APPARATUS HAVING MULTI-LEVEL CELL (MLC) MAGNETIC MEMORY CELL AND METHOD OF STORING DATA IN MULTI-LEVEL CELL MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for writing data to a magnetic memory element, such as a spin-torque transfer random access memory (STRAM) memory cell.;SOLUTION: In accordance with various embodiments, a multi-level cell (MLC) magnetic memory cell stack has first and second magnetic memory elements connected to a first control line and a switching element connected to a second control line. The first memory element is connected in parallel with the second memory element, and the first and second memory elements are connected in series with the switching element. The first and second memory elements are further disposed at different non-overlapping elevations within a stack. Programming currents are passed between the first and second control lines to concurrently set the first and second magnetic memory elements to different programmed resistances.;COPYRIGHT: (C)2012,JPO&INPIT