Attenuator EUV illumination optical system for EUV microlithography, the illumination optical system for this type, and a projection exposure apparatus having an illumination system and an illumination optical system of this kind

摘要

An illumination optical system for EUV microlithography, is used to guide the illuminating light beam in the object field from the radiation source. EUV one mirror (13) has a (29) reflecting surface having a non-planar topography of the mirror for forming an illumination light beam, at least. EUV mirror (13) has an EUV attenuator at least one is arranged in front of it. And a attenuator topography that is designed to complement the mirror topography, attenuators surface that faces (29) reflecting surface EUV mirror (13), sections of certain at least one of the attenuator side whereby and are positioned at regular intervals from the reflecting surface (29). Illumination parameters over the object field, for example, the result is an illumination optical system which can correct undesirable changes in the illumination angle distribution or light intensity distribution without only radiation loss is not desirable as small as possible. [Selection Figure 9