Production mannered null plasma chemical vapor phase growth of the multilayer thin film structure which is based on

摘要

Disclosed herein is a method of manufacturing multi-layered thin films having different physical properties on a base material using a plasma-enhanced chemical vapor deposition (PECVD) process. The method includes changing a plasma frequency to be applied, while not changing a composition ratio of a mixed gas for plasma generation, to sequentially form thin films corresponding to a plasma composition of the plasma frequency.