High-speed and low-power magnetic device of the spin moment transition, which is induced by the current base

摘要

The present invention generally relates to the field of magnetic devices for memory cells that can serve as non-volatile memory. More specifically, the present invention describes a high speed and low power method by which a spin polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer (FM1) with a fixed magnetization direction, a free magnetic layer (FM2) with a free magnetization direction, and a read-out magnetic layer (FM3) with a fixed magnetization direction. The pinned magnetic layer and the free magnetic layer are separated by a non-magnetic layer (N1), and the free magnetic layer and the read-out magnetic layer are separated by another non-magnetic layer (N2). The magnetization directions of the pinned and free layers generally do not point along the same axis. The non-magnetic layers minimize the magnetic interaction between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.