Being the manner which produces the mannered null substrate which grows the active region inside the semiconductor

摘要

PROBLEM TO BE SOLVED: To provide a method of making an (Al, Ga, In)N semiconductor device having a substrate and an active region.;SOLUTION: This method includes a step to grow the active region using a combination of (i) plasma-assisted molecular beam epitaxy; and (ii) molecular beam epitaxy using a gas including nitrogen-containing molecules which dissociate on the surface of the substrate at a temperature at which the active region is grown.;COPYRIGHT: (C)2010,JPO&INPIT