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Wavelength tunable semiconductor laser for gas detector and gas detector

机译:用于气体探测器的波长可调半导体激光器和气体探测器

摘要

PROBLEM TO BE SOLVED: To provide a wavelength variable semiconductor laser for gas detection, emitting laser beam having high modulation characteristics.;SOLUTION: The wavelength variable semiconductor laser 27 for gas detection is provided with an n-type semiconductor substrate 11, an active layer 17 arranged above the n-type semiconductor substrate and generating light, a p-type clad layer 22 arranged above the active layer, and a diffracting grating oscillating selectively only a light having a specific wavelength among lights generated by the active layer. An element length L representing the length of a propagation direction in which the generated light propagates within the active layer is set to 200 to 500 m which is suitable for increasing the quantity of current per unit area and raising a temperature of the active layer. Further, the p-type clad layer 22 includes a low concentration clad layer 19 having a low impurity concentration and a high concentration clad layer 20 having a high impurity concentrations, which are arranged in this order from the active layer side.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:为了提供用于气体检测的波长可变半导体激光器,其发射具有高调制特性的激光束。解决方案:用于气体检测的波长可变半导体激光器27设置有n型半导体衬底11,有源层。布置在n型半导体衬底上方并产生光的图17所示的器件,布置在有源层上方的p型覆盖层22,以及仅衍射由有源层产生的光中的具有特定波长的光的衍射光栅。代表所产生的光在有源层内传播的传播方向的长度的元件长度L被设置为200至500m,其适合于增加每单位面积的电流量并升高有源层的温度。另外,p型覆盖层22从活性层侧依次配置有杂质浓度低的低浓度覆盖层19和杂质浓度高的高浓度覆盖层20。 C)2008,日本特许厅

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