Being the manner which etches the silicify nickel and the mannered and mannered null silicify nickel which etches the silicify

摘要

The invention includes a method of forming conductive lines and a method for etching a cobalt silicide and nickel silicide, and the like. In one embodiment, an effective substrate comprising nickel silicide is a _{2 O} H and H ₃ PO ₄ at a pressure of 1100 torr 350 torr and a temperature of at least 50 in order to etch the nickel silicide from the substrate It is exposed to fluids containing. In one embodiment, at least one of cobalt silicide or nickel silicide, 350 Torr effective, and a temperature of 50 or more in order to etch the at least one of cobalt silicide or nickel silicide from the substrate at a pressure of 1100 _{Torr, H 2} SO _4, H ₂ O _2, H _{2 O,} and is exposed to fluids containing HF. [Selection] Figure Figure 1