It is used in order to measure the size of structure on the semiconductor device, non breaking light wave measurement (light wave dispersion measurement) (scatterometry) critical dimension of one which was formed on

摘要

The metrology tool where this invention generally, is used in order to measure the size of structure on the semiconductor element device, is based on non destruction light wave measurement (74) it regards method and the structure which are calibrated. In one of a certain execution form, as for this method, the non destructive light wave measurement tool (74) using, the wafer (31) step and the non destructive light wave measurement tool which at least measure the critical dimension of one which was formed on product structure (74) using, the step which at least corrects the critical dimension of one which was measured this wafer (31) it was formed on the plural grating structures which possess the critical dimension which differs respectively (60) step and this at least one grating structure which measure at least one inside (60) on the basis of measurement, product structureWith, it includes. Regarding further execution form, this method, the wafer (31) step and this wafer which form plural product structures on (31) plural grating structures (60) (this grating structure (60) the plural structures where each one has had target kuriteikarudeimenshiyon (38A) has had each, on, because of this, that grating structure (60) critical dimension is defined. This grating structure (60) each one has had the critical dimension which differs.)Step and the non destructive light wave measurement tool which are formed (74) using, in order that the step which measures at least one critical dimension among plural product structures and, it decides the critical dimension where one grating structure (60) inside one structure was measured at least at least, the non destructive light wave measurement tool (74) using, plural grating structures (60) the step which measures at least one inside and, critical dimension and this at least one grating where one grating structure (60) the top was measured one structure (38A) at least at leastStructure (60) structure above (38A) on the basis of the comparison with target kuriteikarudeimenshiyon, the step which corrects the critical dimension where one product structure was measured at least and, it includes.