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摘要

PROBLEM TO BE SOLVED: To provide a process condition for stacking a clad layer comprising p-type aluminum-gallium nitride on light emitting layer comprising a group III nitride semiconductor containing In without deterioration of the crystal quality of the light emitting layer to form a group III nitride semiconductor light emitting element excellent in light emitting efficiency.;SOLUTION: The method of manufacturing the group III nitride semiconductor light emitting element includes forming a double-hetero-structure comprising an n-type clad layer 103, a light emitting layer, and a p-type clad layer 107 by successively contacting to stacking the n-type clad layer 103 comprising the group III nitride semiconductor, the light emitting layer 105 comprising an InGaN layer, and the p-type clad layer 107 comprising an aluminum-gallium nitride layer on a substrate by MOCVD method. In this case, indium starting material is supplied into an atmosphere for growing the p-type clad layer 107, and a temperature for growing the p-type clad layer is kept in a range between 800°C to 1,000°C.;COPYRIGHT: (C)2009,JPO&INPIT