首页>
外国专利>
STRUCTURE OF TMR AND FABRICATION METHOD OF INTEGRATED 3-AXIS MAGNETIC FIELD SENSOR AND SENSING CIRCUIT
STRUCTURE OF TMR AND FABRICATION METHOD OF INTEGRATED 3-AXIS MAGNETIC FIELD SENSOR AND SENSING CIRCUIT
展开▼
机译:三轴磁场传感器与传感电路集成的TMR结构及制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A structure of TMR includes two magnetic tunneling junction (MTJ) devices with the same pattern and same magnetic film stack on a same conducting bottom electrode and a parallel connection of conducting top electrode. Each MTJ device includes a pinned layer on the bottom electrode, having a pinned magnetization; a non-magnetic tunneling on the pinned layer; and a free layer on the tunneling layer, having a free magnetization. These two MTJ devices have a collinear of easy-axis and their pinned magnetizations all are parallel to a same pinned direction which has an angle of 45 degree to easy-axis; their free magnetizations initially are parallel to the easy-axis but directions are mutual anti-parallel by applying a current generated ampere field. The magnetic field sensing direction is perpendicular to the easy-axis on the substrate.
展开▼