首页> 外国专利> BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION

BORAZINE-BASED RESIN, PROCESS FOR ITS PRODUCTION, BORAZINE-BASED RESIN COMPOSITION, INSULATING FILM AND METHOD FOR ITS FORMATION

机译：硼基树脂，其生产过程，硼基树脂组成，绝缘膜及其形成方法

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摘要

Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10⁻⁸A/cm².

机译：设置在存储电容器单元 8 中的层间绝缘膜 5,7 （绝缘膜）形成在栅电极 3 和对电极之间。 B> 8 C形成在硅晶片 1上。层间绝缘膜 5,7 包括硼嗪类树脂，其比介电常数为0。大于2.6，杨氏模量为5 GPa或更大，漏电流不大于1×10 ^{-8 A / cm ^{2 。}} 展开▼

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公开/公告号US2011313122A1

专利类型

公开/公告日2011-12-22

原文格式PDF

申请/专利权人 HIROSHI MATSUTANI;MAKOTO KAJI;KOICHI ABE;YUKO UCHIMARU;
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申请/专利号US201113219342

发明设计人 HIROSHI MATSUTANI;KOICHI ABE;YUKO UCHIMARU;MAKOTO KAJI;
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申请日2011-08-26

分类号C08G79/08;C07F7/21;

国家 US

入库时间 2022-08-21 17:30:39

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