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Superior fill conditions in a replacement gate approach by using a tensile stressed overlayer
Superior fill conditions in a replacement gate approach by using a tensile stressed overlayer
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机译:通过使用拉应力覆盖层,在替代浇口方法中具有出色的填充条件
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摘要
In a replacement gate approach for forming high-k metal gate electrodes in semiconductor devices, a tapered configuration of the gate openings may be accomplished by using a tensile stressed dielectric material provided laterally adjacent to the gate electrode structure. Consequently, superior deposition conditions may be achieved while the tensile stress component may be efficiently used for the strain engineering in one type of transistor. Furthermore, an additional compressively stressed dielectric material may be applied after providing the replacement gate electrode structures.
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