首页> 外国专利> Magnitude comparator, magnitude comparator based content addressable memory cell, and non-equal bin width histogrammer

Magnitude comparator, magnitude comparator based content addressable memory cell, and non-equal bin width histogrammer

机译:幅值比较器,基于幅值比较器的内容可寻址存储单元以及非等仓宽度直方图

摘要

A magnitude comparator for comparing magnitude of a first data and a second data is disclosed. The first data and the second data are both binary data. The magnitude comparator includes many non-least comparator cells and a P-channel transistor. Each of the non-least comparator cells includes a first transistor, a second transistor, a third transistor and a fourth transistor. The drain of the second transistor is electrically connected to the source of the first transistor, and the source of the second transistor is electrically connected to a ground terminal. The third transistor electrically connects the first transistor, and the fourth transistor electrically connects the first transistor and the third transistor. The source of the P-channel transistor electrically connects a supply terminal, the gate of the P-channel transistor electrically connects the ground terminal, and the drain of the P-channel transistor electrically connects the third transistor of the first comparator cell.
机译:公开了一种用于比较第一数据和第二数据的幅度的幅度比较器。第一数据和第二数据都是二进制数据。幅度比较器包括许多非最少比较器单元和一个P沟道晶体管。每个非最少比较器单元包括第一晶体管,第二晶体管,第三晶体管和第四晶体管。第二晶体管的漏极电连接到第一晶体管的源极,第二晶体管的源极电连接到接地端。第三晶体管电连接第一晶体管,并且第四晶体管电连接第一晶体管和第三晶体管。 P沟道晶体管的源极电连接供应端子,P沟道晶体管的栅极电连接接地端子,并且P沟道晶体管的漏极电连接第一比较器单元的第三晶体管。

著录项

  • 公开/公告号US8253546B2

    专利类型

  • 公开/公告日2012-08-28

    原文格式PDF

  • 申请/专利权人 TSUNG-CHU HUANG;

    申请/专利号US20100954627

  • 发明设计人 TSUNG-CHU HUANG;

    申请日2010-11-25

  • 分类号G05B1/00;

  • 国家 US

  • 入库时间 2022-08-21 17:28:48

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