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Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry
Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry
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机译:集成电路制造中形成沟槽隔离的方法和集成电路制造方法
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摘要
First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.
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