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Two-step simulation methodology for aging simulations

机译:老化模拟的两步模拟方法

摘要

The present invention is a method and system for simulating the aging process of a circuit. A two-step process is employed whereby, in a first simulation step, a simulation is conducted to obtain node voltages for the original circuit and the node voltages are stored in a file. In the second step, a subsequent simulation is run after transistors of the circuit are replaced by aging subcircuits, which contain aging models, and initial node voltages are updated. A script is used to set the bias voltage inputs for the aging models using the node voltages stored in the file from the first step. With more accurate bias voltage inputs for the aging models, the aging simulations are conducted to compute the circuit degradation.
机译:本发明是一种模拟电路老化过程的方法和系统。采用两步过程,在第一步仿真中,进行仿真以获得原始电路的节点电压,并将节点电压存储在文件中。在第二步中,在电路的晶体管被​​老化的子电路代替后,进行后续仿真,老化的子电路包含老化模型,并且初始节点电压被更新。脚本用于使用第一步中存储在文件中的节点电压为老化模型设置偏置电压输入。通过为老化模型提供更准确的偏置电压输入,可以进行老化仿真以计算电路退化。

著录项

  • 公开/公告号US8099269B2

    专利类型

  • 公开/公告日2012-01-17

    原文格式PDF

  • 申请/专利权人 RASIT O. TOPALOGLU;JUNG-SUK GOO;

    申请/专利号US20070869522

  • 发明设计人 RASIT O. TOPALOGLU;JUNG-SUK GOO;

    申请日2007-10-09

  • 分类号G06F17/50;

  • 国家 US

  • 入库时间 2022-08-21 17:26:56

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