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Method for manufacturing a semiconductor device having a source extension region and a drain extension region
Method for manufacturing a semiconductor device having a source extension region and a drain extension region
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机译:具有源极延伸区和漏极延伸区的半导体器件的制造方法
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摘要
There is provided a semiconductor device including: convex semiconductor layers formed on a semiconductor substrate via an insulating film; gate electrodes formed on a pair of facing sides of the semiconductor layers via a gate insulating film; a channel region formed of silicon between the gate electrodes in the semiconductor layers; a source extension region and a drain extension region formed of silicon germanium or silicon carbon on both sides of the channel region in the semiconductor layers; and a source region formed of silicon so as to adjoin to the opposite side of the channel region in the source extension region, and a drain region formed of silicon so as to adjoin to the opposite side of the channel region in the drain extension region in the semiconductor layers.
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