METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS

摘要

A METHOD FOR ETCHING A POLYSILICON GATE STRUCTURE IN A PLASMA ETCH CHAMBER IS PROVIDED. THE METHOD INITIATES WITH DEFINING A PATTERN PROTECTING A POLYSILICON FILM TO BE ETCHED.THEN, A PLASMA IS GENERATED. NEXT, SUBSTANTIALLY ALL OF THE POLYSILICON FILM THAT IS UNPROTECTED IS ETCHED. THEN, A SILICON CONTAINING GAS IS INTRODUCED AND A REMAINDER OF THE POLYSILICON FILM IS ETCHED WHILE INTRODUCING A SILICON CONTAINING GAS. AN ETCH CHAMBER CONFIGURED TO INTRODUCE A SILICON CONTAINING GAS DURING AN ETCH PROCESS IS ALSO PROVIDED.