Method of revealing crystalline faults in a massive substrate

摘要

method of revealing crystal defects existing in the prior hidden in a silicon substrate, and there are massive later if this substrate is used in a process of collection and report of layers and recycled at least three times.;this process is remarkable in that it includes a step consisting in:- submit the solid substrate to a heat treatment to "revelation", carried out in a non reducing atmosphere, at a temperature between 500 and 1300.