首页> 外国专利> DOUBLE-DISC GRINDING MACHINE, STATIC PRESSURE PAD, AND DOUBLE-DISC GRINDING METHOD USING THE SAME FOR SEMICONDUCTOR WAFER

DOUBLE-DISC GRINDING MACHINE, STATIC PRESSURE PAD, AND DOUBLE-DISC GRINDING METHOD USING THE SAME FOR SEMICONDUCTOR WAFER

机译:双盘研磨机,静压垫和使用相同晶片的双盘研磨方法

摘要

The present invention is a static pressure pad for supporting both sides of a raw wafer without contact by a static pressure of a fluid supplied to the both sides of the raw wafer in a double-disc grinding machine for a semiconductor wafer, wherein in patterns of lands to be banks of surrounding pockets formed on a surface side of supporting the raw wafer of the static pressure pad, an outer circumferential land pattern required to support the raw wafer is a concentric circle with respect to a rotation center of the raw wafer, and a land pattern inside the outer circumferential land pattern is a non-concentric circle with respect to the rotation center of the raw wafer and asymmetrical with respect to all the straight lines which bisect the static pressure pad. With this static pressure pad, there is provided the double-disc grinding machine and a double-disc grinding method for the semiconductor wafer, which can minimize a "middle ring" of average components obtained by averaging a nanotopography of the wafers after the double-disc grinding.
机译:本发明是一种静压垫,该静压垫在半导体晶片的双盘磨床中用于支撑生晶片的两面而不接触供给到生晶片的两面的流体的静压而接触。成为在支撑静压垫的原始晶片的表面侧上形成的包围袋的堤的凸台,支撑原始晶片所需的外周凸台图案是相对于原始晶片的旋转中心的同心圆,并且外周焊盘图案内的焊盘图案相对于生晶片的旋转中心是非同心圆,并且相对于将静压垫等分的所有直线是不对称的。利用该静压垫,提供了用于半导体晶片的双盘研磨机和双盘研磨方法,其可以最小化通过平均双晶片之后的晶片的纳米形貌而获得的平均成分的“中间环”。盘磨。

著录项

  • 公开/公告号EP1959483B1

    专利类型

  • 公开/公告日2012-06-13

    原文格式PDF

  • 申请/专利权人 SHINETSU HANDOTAI KK;

    申请/专利号EP20060822774

  • 发明设计人 OISHI HIROSHI;KOBAYASHI KENJI;

    申请日2006-11-01

  • 分类号B24B49/16;B24B7/22;

  • 国家 EP

  • 入库时间 2022-08-21 17:17:07

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