THERMAL HISTORY SENSING

摘要

A history sensor is described. The sensor comprises a support substrate comprising a group IV semiconductor; at least one thin-film metal structure connected to at least a first and second contact pad, at least part of said first metal structure being in contact with said group IV semiconductor, wherein said metal is selected such that it reacts with said group IV semiconductor to a metal-compound semiconductor region when exposing said sensor to temperatures around or above a predetermined reaction temperature associated with the formation of said metal-compound semiconductor and wherein the electrical response of said exposed sensor provides information on at least a first part of said thermal exposure.