High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor

摘要

There is provided a high voltage integrated circuit comprising a first high voltage junction terminating structure formed in the shape of a loop. At least a MIS transistor is formed inside said loop of said first high voltage junction terminating structure; and a high voltage MIS transistor has a drain electrode on one side of said loop of said first high voltage junction terminating structure, and a gate electrode and a source electrode on another side of said loop of said first high voltage junction terminating structure.