METHOD FOR FORMING POLYCRYSTALLINE THIN FILM OF Si AND/OR Ge ON SUBSTRATE

摘要

A polycrystalline thin film (4) which contains Si and/or Ge is efficiently formed at low cost by forming a catalyst layer (2) on a substrate (3) that is formed of glass or the like and supplying a starting material that contains Si and/or Ge onto the catalyst layer by a dry process, while heating the substrate on which the catalyst layer has been formed.