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HEAT SINK FOR PULSED HIGH-POWER LASER DIODE
HEAT SINK FOR PULSED HIGH-POWER LASER DIODE
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机译:脉冲高功率激光二极管的热沉
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摘要
A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The semiconductor laser is designed in such a way that it emits heat pulses having a minimum specific heat of approximately 3 mJ per mm2, preferably approximately 5 mJ/mm2, and having a pulse duration of approximately 100 μs to approximately 2,000 μs, and the primary layer has a layer thickness which is between approximately 200 μm and approximately 2,000 μm, preferably between approximately 400 μm and approximately 2,000 μm.
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机译:一种半导体激光器模块,其具有衬底并且具有至少一个位于衬底上的半导体激光器,所述衬底具有层结构,所述层结构包括至少一个与所述半导体激光器建立热接触的主层。以这样的方式设计半导体激光器,使得其发射具有至少约3mJ / mm 2,优选地约5mJ / mm 2的最小比热并且具有约100μs至约2,000μs的脉冲持续时间的热脉冲。并且,第一层的层厚度在约200μm至约2,000μm之间,优选在约400μm至约2,000μm之间。
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