Integrated resistor with titanium nitride and tantalum nitride resistance elements

摘要

There is provided a semiconductor device having resistance elements small in temperature dependence of the resistance value. The semiconductor device has two metal resistance element layers (Rm1,Rm2). Each metal resistance element layer includes a resistance film layer (Rm12,Rm11). One of the metal resistance film layers is of titanium nitride and the other one of tantalum nitride. The resistance value of titanium nitride has a positive temperature coefficient. Whereas, the resistance value of tantalum nitride has a negative temperature coefficient. A contact plug (P2) electrically couples the metal resistance film layers with each other. Therefore, the temperature coefficient of the titanium nitride and the temperature coefficient of the tantalum nitride cancel each other.