HIGH ELECTRON MOBILITY TRANSISTOR WITH A REDUCED CHANNEL LENGTH CAPABLE OF REDUCING ON-RESISTANCE BY REDUCING CHANNEL RESISTANCE AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A high electron mobility transistor with a reduced channel length and a manufacturing method thereof are provided to reduce the length of an effective gate of a gate electrode less than a minimum line width.;CONSTITUTION: A buffer layer(24) is arranged on a substrate(20). A first semiconductor layer(30) is arranged on the buffer layer. A second semiconductor layer(32) is arranged on the semiconductor layer. A 2DEG(2-Dimensional Electron Gas) channel is arranged on the first semiconductor layer by the second semiconductor layer. A source electrode(34S) and drain electrode(34D) are arranged on the second semiconductor layer.;COPYRIGHT KIPO 2012