首页> 外国专利> Broadband Planar Inverted-F Antenna have enhanced bandwidth by injecting dielectric material and Manufacturing Method thereof

Broadband Planar Inverted-F Antenna have enhanced bandwidth by injecting dielectric material and Manufacturing Method thereof

机译:宽带平面倒f天线通过注入介电材料具有增强的带宽及其制造方法

摘要

The present invention relates to a wideband planar inverted F antenna for improving bandwidth by injecting a dielectric solution and a method for manufacturing the same. The wideband planar inverted F antenna for improving bandwidth by injecting a dielectric solution according to the present invention is spaced apart from each other at a predetermined interval. And a plurality of parallel lines formed to face each other, and the current flow of each parallel line is formed in a conductive pattern of a predetermined type including attenuation patterns in which current attenuation occurs in mutually opposite directions. Radiator; And a frame having a predetermined shape including an upper surface for supporting and fixing the radiator, and a lower surface for forming a dielectric solution injecting portion into which a dielectric solution having a predetermined dielectric constant is injected at a position corresponding to the attenuation pattern of the radiator. Is done. Accordingly, the present invention provides a wideband planar inverted F antenna and a method of manufacturing the same, in which a dielectric solution having a predetermined dielectric constant is injected into a predetermined position of a lower surface of a frame corresponding to attenuation pattern of a radiator in which current attenuation occurs. It is effective.
机译:宽带平面倒F天线及其制造方法技术领域本发明涉及一种通过注入介电溶液来提高带宽的宽带平面倒F天线及其制造方法。根据本发明的用于通过注入介电溶液来改善带宽的宽带平面倒F形天线以预定间隔彼此间隔开。并且,形成为彼此面对的多条平行线,并且每条平行线的电流形成为预定类型的导电图案,该预定类型的导电图案包括其中在彼此相反的方向上发生电流衰减的衰减图案。散热器;以及具有预定形状的框架,其包括用于支撑和固定辐射器的上表面,以及用于形成介电溶液注入部分的下表面,在与介电层的衰减图案相对应的位置处注入介电溶液以注入预定介电常数。散热器。已经完成了。因此,本发明提供了一种宽带平面倒F天线及其制造方法,其中将具有预定介电常数的介电溶液注入到与辐射器的衰减模式相对应的框架下表面的预定位置中。其中发生电流衰减。有效。

著录项

  • 公开/公告号KR101085815B1

    专利类型

  • 公开/公告日2011-11-22

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100022019

  • 发明设计人 심부석;문상혁;이재호;

    申请日2010-03-12

  • 分类号H01Q9/04;H01Q1/38;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:09

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