METHOD FOR CONTROLLING SOLUTIONS OF SEMICONDUCTOR MORPHOLOGY USING GAS FLOW, OTFT AND MANUFACTURING METHOD THE OTFT USING THE SAME

摘要

PURPOSE: a kind of method,It is provided on substrate of the control crystal growth direction semiconductor by fluid guidance asymmetry dry liquid semiconductor coating for control solution semiconductor form using air-flow, the manufacturing method of OTFT and using the OTFT. ;CONSTITUTION: air-flow, the manufacturing method of OTFT OTFT, and the top surface (10) using the formation gate electrode (20) are used in a kind of control solution semiconductor form. It is formed on substrate on the top of gate insulation layer (30) and covers grid. Gate insulation layer is formed in source electrode and drain electrode (40,50). Organic semiconductor layer (60) partly covers source and drain electrode on gate electrode. The organic semiconductor layer for forming the organic semiconductor layer is unevenly distributed by dry liquid. ;The 2012 of copyright KIPO submissions