首页> 外国专利> OPERATIONAL AMPLIFIER FOR INCLUDING AN OVER DRIVING CIRCUIT CAPABLE OF ARRIVING TO A TARGET VOLTAGE WITHIN AN OPERATING TIME

OPERATIONAL AMPLIFIER FOR INCLUDING AN OVER DRIVING CIRCUIT CAPABLE OF ARRIVING TO A TARGET VOLTAGE WITHIN AN OPERATING TIME

机译:运算放大器,包括在工作时间内能到达目标电压的超速驾驶电路

摘要

PURPOSE: An operational amplifier for including an over driving circuit is provided to arrive to a target voltage within an operating time by outputting a higher voltage than a target voltage when an RC delay time is long.;CONSTITUTION: A first stage part(100) offers a bias current by including two input terminals and one output terminal. A first overdriving part(200) offers an offset current for overdriving motion in a rising edge. A second overdriving part(300) offers the offset current for the overdriving motion in a falling edge. A second stage part(400) is designed with a circuit like a common source amplifier. A buffer part(500) is formed with a CMOS(Complementary Metal Oxide Semiconductor) type transistor including a NMOS(N-channel metal oxide semiconductor) transistor(N15) and a PMOS(P-channel metal oxide semiconductor) transistor(P15).;COPYRIGHT KIPO 2012
机译:目的:提供一个包括过驱动电路的运算放大器,通过在一个RC延迟时间较长时输出比目标电压更高的电压,从而在工作时间内达到目标电压。组成:第一级部分(100)通过包括两个输入端子和一个输出端子来提供偏置电流。第一超速驱动部分(200)提供偏置电流,用于在上升沿中超速驱动运动。第二超速驱动部分(300)为下降沿中的超速驱动运动提供偏置电流。第二级部分(400)设计有类似于公共源放大器的电路。缓冲部分(500)由包括NMOS(N沟道金属氧化物半导体)晶体管(N15)和PMOS(P沟道金属氧化物半导体)晶体管(P15)的CMOS(互补金属氧化物半导体)型晶体管形成。 ; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120020665A

    专利类型

  • 公开/公告日2012-03-08

    原文格式PDF

  • 申请/专利权人 MAGNACHIP SEMICONDUCTOR LTD.;

    申请/专利号KR20100084413

  • 发明设计人 CHUNG KYU YOUNG;

    申请日2010-08-30

  • 分类号H03F3/45;H03F1/30;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:33

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