首页> 外国专利> THIN FILM TRANSISTOR BASE BIOSENSOR AND A MANUFACTURING METHOD, CAPABLE OF IMPROVING A DETECTION SENSITIVITY OF A SENSOR BY INTENSIVELY FIXING THE BIO MOLECULAR ON A GATE REGION

THIN FILM TRANSISTOR BASE BIOSENSOR AND A MANUFACTURING METHOD, CAPABLE OF IMPROVING A DETECTION SENSITIVITY OF A SENSOR BY INTENSIVELY FIXING THE BIO MOLECULAR ON A GATE REGION

机译:基于薄膜晶体管的生物传感器及其制造方法,能够通过将生物分子密集地固定在门区域上来提高传感器的检测灵敏度

摘要

PURPOSE: A thin film transistor base biosensor and a manufacturing method thereof are provided to simplify a manufacturing process by using the interfacial property of a hydrophilic gate isolation layer and hydrophobicity photoresist.;CONSTITUTION: A manufacturing method of a thin film transistor base biosensor is as follows. A source electrode(11) and drain electrode(12) are formed on the substrate(10). A part of the substrate in which the source electrode and drain electrode are not formed is etched so that a recessed channel(15) is formed. A hydrophilic property gate isolation layer(13) is formed on the substrate in which the source electrode, the drain electrode, and the recessed channel are formed. A hydrophobicity photoresist(14) is spread in the hydrophilic property gate isolation layer. The hydrophobicity photoresist is developed after exposing to outside and a gate region is formed.;COPYRIGHT KIPO 2012
机译:目的:提供一种薄膜晶体管基生物传感器及其制造方法,以利用亲水栅隔离层和疏水性光致抗蚀剂的界面特性简化制造工艺。如下。在基板(10)上形成有源电极(11)和漏电极(12)。蚀刻其中未形成源电极和漏电极的基板的一部分,从而形成凹陷的沟道(15)。在其中形成有源电极,漏电极和凹陷沟道的基板上形成亲水性栅极隔离层(13)。疏水性光致抗蚀剂(14)散布在亲水性栅极隔离层中。疏水性光致抗蚀剂在暴露于外部后显影,并形成栅极区域。; COPYRIGHT KIPO 2012

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