首页> 外国专利> APPARATUS FOR PLASMA IMPEDANCE MATCHING FOR MINIMIZING REFLECTED POWER BY EFFICIENTLY PERFORMING PLASMA IMPEDANCE MATCHING AND A METHOD THEREOF

APPARATUS FOR PLASMA IMPEDANCE MATCHING FOR MINIMIZING REFLECTED POWER BY EFFICIENTLY PERFORMING PLASMA IMPEDANCE MATCHING AND A METHOD THEREOF

机译:通过有效地执行等离子体阻抗匹配来最小化反射功率的等离子体阻抗匹配的装置及其方法

摘要

PURPOSE: An apparatus for plasma impedance matching and a method thereof are provided to minimize poor substrate processing by minimizing reflected power.;CONSTITUTION: An apparatus for plasma impedance matching is arranged between a radio frequency power supply(2110) supplying high frequency power and a processing chamber(2160) processing substrate by plasma. The apparatus for plasma impedance matching includes an impedance matching apparatus(2210) and a controller(2250). The apparatus for plasma impedance matching matches impedance between a processing chamber(2160) and the radio frequency power supply by using a variable capacity. The impedance matching apparatus is connected to a high frequency transmission line(2120). The impedance matching apparatus includes a first variable capacity(2220) and a second variable capacity(2240). The first variable capacity includes a capacitor(2221) and a driving device(2223).;COPYRIGHT KIPO 2012
机译:目的:提供一种用于等离子体阻抗匹配的装置及其方法,以通过最小化反射功率来最小化不良的基板处理。处理室(2160)通过等离子体处理基板。用于等离子体阻抗匹配的设备包括阻抗匹配设备(2210)和控制器(2250)。用于等离子体阻抗匹配的设备通过使用可变容量来匹配处理室(2160)和射频电源之间的阻抗。阻抗匹配设备连接到高频传输线(2120)。阻抗匹配设备包括第一可变容量(2220)和第二可变容量(2240)。第一可变容量包括电容器(2221)和驱动装置(2223)。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120048418A

    专利类型

  • 公开/公告日2012-05-15

    原文格式PDF

  • 申请/专利权人 SEMES CO. LTD.;

    申请/专利号KR20100110037

  • 发明设计人 SON DUK HYUN;

    申请日2010-11-05

  • 分类号H05H1/46;H03H7/40;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:05

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