首页> 外国专利> A NOVEL NAND-BASED HYBRID NVM DESIGN THAT INTEGRATES NAND AND NOR IN 1-DIE WITH SERIAL INTERFACE

A NOVEL NAND-BASED HYBRID NVM DESIGN THAT INTEGRATES NAND AND NOR IN 1-DIE WITH SERIAL INTERFACE

机译:一种基于新型NAND的混合NVM设计,该技术将具有串行接口的1-Die集成NAND和NOR

摘要

A nonvolatile memory device includes multiple independent nonvolatile memory arrays that concurrently for parallel reading and writing the nonvolatile memory arrays. A serial interface communicates commands, address, device status, and data between a master device and nonvolatile memory arrays for concurrently reading and writing of the nonvolatile memory arrays and sub-arrays. Data is transferred on the serial interface at the rising edge and the falling edge of the synchronizing clock. The serial interface transmits a command code and an address code from a master device and transfers a data code between the master device and the nonvolatile memory device, wherein the data code has a length that is determined by the command code and a location determined by the address code. Reading one nonvolatile memory array may be interrupted for reading another. One reading operation has two sub-addresses with one transferred prior to a command.
机译:非易失性存储设备包括多个独立的非易失性存储阵列,其同时并行地读写非易失性存储阵列。串行接口在主设备和非易失性存储器阵列之间传送命令,地址,设备状态和数据,以同时读取和写入非易失性存储器阵列和子阵列。数据在同步时钟的上升沿和下降沿在串行接口上​​传输。串行接口从主设备发送命令代码和地址代码,并在主设备和非易失性存储设备之间传输数据代码,其中数据代码具有由命令代码确定的长度和由存储设备确定的位置。地址代码。读取一个非易失性存储器阵列可能会中断以读取另一个。一个读取操作具有两个子地址,其中一个在命令之前传送。

著录项

  • 公开/公告号KR20120108971A

    专利类型

  • 公开/公告日2012-10-05

    原文格式PDF

  • 申请/专利权人 APLUS FLASH TECHNOLOGY INC.;

    申请/专利号KR20127010439

  • 发明设计人 LEE PETER W.;WANG KESHENG;HSU FU CHANG;

    申请日2010-09-20

  • 分类号G11C16/06;G06F12/00;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:02

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