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High strain glass/glass-ceramic containing semiconductor-on-insulator structures
High strain glass/glass-ceramic containing semiconductor-on-insulator structures
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机译:包含绝缘体上半导体的高应变玻璃/玻璃陶瓷
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摘要
The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the strain point of the glass or glass-ceramic equal to or greater than about 800° C.
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