A METHOD FOR PRODUCING A WAFER COMPRISING A SILICON SINGLE CRYSTAL SUBSTRATE HAVING A FRONT AND BACK SIDE AND A LAYER OF SiGe DEPOSITED ON THE FRONT SIDE

摘要

A method for producing the front and wafer comprising a silicon single crystal substrate having the SiGe layer deposited on the front side and the back, front, comprising the steps of polishing the front and the back surface of the silicon single crystal substrate at the same time, the stress compensating layer on the back surface of the silicon single-crystal substrate depositing a and a step for polishing a front surface of the silicon single crystal substrate, comprising the steps of cleaning the silicon single crystal substrate of the stress compensating layer deposited on the back surface, the silicon single crystal over the whole or part of the SiGe layer relaxes to a substrate method for producing a wafer is disclosed as including a step of depositing a sequence. ;