Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit

摘要

is not affected by the impurities, and high-brightness short-wavelength ultraviolet light emission, which reflects the inherent characteristics of high purity hexagonal ( ) provide a single crystal boron nitride, and the use of the single crystal, and to provide a high-intensity ultraviolet light-emitting device, thus, a simple, compact, low ( ) cost, long-life, other atom ( ) solid state laser, and intended to provide an atom other solid light emitting device. ; in the presence of a highly pure solvent, melting the raw material to the boron nitride crystal with the single crystal at high temperature and pressure, crystallized by, other wavelengths below 235 atom ( ) a single emission peak in the region has gained a high-purity hexagonal boron nitride single crystal, and this light-emitting element to the light-emitting layer formed of a crystal with an electron beam ( ), 0 people by the external light atoms ( ) occurring, or, to be taken out without resonance.