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Refining method of Phosphorus and other impurities from MG-Si by acid leaching

机译:酸浸提纯MG-Si中磷及其他杂质的方法

摘要

for producing a silicon solar cell with MG-Si during acid leaching of impurities in the refining method is provided. The present invention relates to a process for refining the MG-Si of impurities, the acid solution, corrosion resistance strong pyrex beaker, carbon vessel, Al 2 O 3 vessel, Tefron MgO vessel and the vessel to provide a single vessel selected in the process; Non-corrosive to MG-Si silicon in the container HCl, HNO 3 , H 2 SO 4 , and at least one acid selected from the HF supplying a process solution; The acid solution at a weight ratio of silicone with the acid solution within the supply container 1: a supplying step so as to satisfy the MG-Si 0.5-2; Of the acid leaching process, including using MG-Si; and a step for removing impurities in the ion state of the Si surface by the reaction of the acid solution and the Si and by maintaining a preset temperature and the time for the MG-Si within the vessel relates to a method of refining impurities. ;
机译:本发明提供一种在精制方法中的杂质的酸浸出中用MG-Si制造硅太阳能电池的方法。本发明涉及一种精制杂质MG-Si,酸性溶液,耐腐蚀的强力烧杯,碳容器,Al 2 O 3 容器,特氟龙的方法。 MgO容器和提供该过程中选择的单个容器的容器;对容器中的HCl,HNO 3 ,H 2 SO 4 和至少一种选自酸HF提供工艺解决方案;在供给容器1内以硅酮与酸溶液的重量比的酸溶液1:供给步骤,以满足MG-Si 0.5-2;的酸浸工艺包括使用MG-Si;通过酸溶液和Si的反应并通过保持容器内MG-Si的设定温度和时间来除去Si表面的离子状态的杂质的步骤涉及精制杂质的方法。 ;

著录项

  • 公开/公告号KR101180353B1

    专利类型

  • 公开/公告日2012-09-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100063299

  • 发明设计人 정은진;민동준;

    申请日2010-07-01

  • 分类号C01B33/037;B09B3/00;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:34

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