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Ultrathin CdSe Nanoribbons with Uniform Thickness and Process for Preparation of the Same

机译:具有均匀厚度的超薄CdSe纳米带及其制备方法

摘要

Cadmium selenide nanoribbons having a uniform thickness are provided to emit a blue light having a narrow full width at half maximum of the electroluminescent wavelength and be manufactured at low temperature of 100°C or below. Cadmium selenide nanoribbons having a uniform thickness grow along a crystal face(0001) and are surrounded by crystal faces(1100,1120). A method for manufacturing cadmium selenide semiconductor nanoribbons comprising the cadmium selenide nanoribbons includes the steps of: (i) adding CdCl2 to a C3-C10 alkyl amine, heating and stirring the admixture to form a Cd-alkylamine complex; (ii) adding Se to a C3-C10 alkyl amine, stirring the admixture, and introducing carbon monoxide into the admixture to form a Se precursor; (iii) mixing the Cd-alkylamine complex with the Se precursor and heating the mixture; and (iv) growing nanoribbons while keeping a solution containing the Cd-alkylamine complex and the Se precursor at suitable temperature for growth of nanocrystals.
机译:提供具有均匀厚度的硒化镉纳米带,以发出在电致发光波长的一半最大值处具有窄的全宽度的蓝光,并且在100℃以下的低温下制造。具有均匀厚度的硒化镉纳米带沿着晶面(0001)生长并且被​​晶面(1100、1120)包围。一种包含硒化镉纳米带的硒化镉半导体纳米带的制造方法,包括以下步骤:(i)将CdCl2添加至C3-C10烷基胺中,加热并搅拌所述混合物以形成Cd-烷基胺络合物; (ii)将Se添加到C 3 -C 10烷基胺中,搅拌混合物,并将一氧化碳引入混合物中以形成Se前体; (iii)将Cd-烷基胺络合物与Se前体混合并加热混合物; (iv)生长纳米带,同时将包含Cd-烷基胺络合物和Se前体的溶液保持在适合于纳米晶体生长的温度下。

著录项

  • 公开/公告号KR101197898B1

    专利类型

  • 公开/公告日2012-11-05

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20060030850

  • 发明设计人 현택환;주진;

    申请日2006-04-05

  • 分类号B82B3;C01B19/04;C01G11;C01B19;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:16

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