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hall cross structure for control the anomalous Hall effect through compressive strain

机译:霍尔交叉结构,通过压缩应变控制异常霍尔效应

摘要

Cross -hole structure of the present invention is a new concept that allows you to adjust the abnormal Hall effect by changing the compression strain relate to . According to the cross -hole structure according to the present invention , the cross -hole (2) is increased to be the buckling or lower to the upper portion , so that the abnormal Hall effect control in accordance with the change of the compression deformation ratio of the cross- holes (2) that is generated in this way , which was then used to help high-density low-power, low dispersion , and has the advantage of having a non- volatile memory to develop . ;
机译:本发明的交叉孔结构是一个新概念,它使您可以通过改变与压缩有关的应变来调节异常霍尔效应。根据本发明的横孔结构,由于将横孔(2)增大到上部的屈曲以下,所以根据压缩变形率的变化进行霍尔效应的异常控制。以这种方式产生的交叉孔(2)的一部分,然后被用于帮助高密度,低功耗,低色散,并且具有开发非易失性存储器的优点。 ;

著录项

  • 公开/公告号KR101198985B1

    专利类型

  • 公开/公告日2012-11-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100100000

  • 发明设计人 김태훈;박윤;양찬욱;

    申请日2010-10-13

  • 分类号H01L27/10;H01L27/115;H01L21/8247;H01L21/302;

  • 国家 KR

  • 入库时间 2022-08-21 17:07:14

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