INTEGRAL AND gate, NOT ON THE BASIS OF THREE-DIMENSIONAL Layered Nanostructures

摘要

FIELD: electricity.;SUBSTANCE: in the integral logical AND-NOT element based on a layered three dimensional nanostructure (the element containing the first and the second logical transistors, the first and the second injecting transistors and a substrate) the logical structure is designed to be nanosized with a stepped profile.;EFFECT: increased response speed and reduced power consumption.;18 dwg