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SUBSTANCE FOR RESEARCHES BY THE METHOD OF STRENGTHENED SURFACE OF COMBINATION SCATTERING

机译:组合散射强化面法研究的实质

摘要

1. Substrate for research by surface enhanced Raman scattering, including a semiconductor surface containing whiskers, coated with a metal selected from the group consisting of silver, gold, platinum, copper and / or their alloys, characterized in that the semiconductor is gallium nitride-containing and each whisker has a linear defect inside. ! 2. The substrate according to claim 1, characterized in that the whiskers are connected to each other by their ends remote from the semiconductor surface, forming conical beams. ! 3. The substrate according to claim 1 or 2, characterized in that the linear defect is a dislocation or inversion region. ! 4. The substrate according to claim 1 or 2, characterized in that the thickness of the metal film on the semiconductor surface is from 50 nm to 150 nm, preferably from 70 nm to 80 nm. ! 5. The substrate according to claim 1 or 2, characterized in that the length of the whiskers is from 0.2 μm to 2.0 μm, preferably from 0.5 μm to 1.5 μm. ! 6. The substrate according to claim 1 or 2, characterized in that the diameter of the whiskers is from 40 nm to 150 nm, preferably from 50 nm to 70 nm. ! 7. The substrate according to claim 1 or 2, characterized in that the ratio of the length of the whiskers to their diameter is from 5 to 50, preferably from 10 to 30.! 8. The substrate according to claim 1 or 2, characterized in that the surface density of the whiskers is from 108 / cm2 to 1010 / cm2. ! 9. The substrate according to claim 1 or 2, characterized in that the metal is gold. ! 10. The substrate according to claim 1 or 2, characterized in that the gallium-containing nitride is gallium nitride GaN. ! 11. The substrate according to claim 1 or 2, characterized in that
机译:1.通过表面增强拉曼散射进行研究的衬底,包括一个包含晶须的半导体表面,该表面覆盖有选自银,金,铂,铜和/或其合金的金属,其特征在于该半导体为氮化镓-晶须内部含有一个线性缺陷。 ! 2.根据权利要求1所述的基板,其特征在于,所述晶须通过其背离所述半导体表面的端部彼此连接,从而形成锥形束。 ! 3.根据权利要求1或2所述的基板,其特征在于,所述线性缺陷是位错或反转区域。 ! 4.根据权利要求1或2所述的基板,其特征在于,所述半导体表面上的金属膜的厚度为50nm至150nm,优选为70nm至80nm。 ! 5.根据权利要求1或2所述的基板,其特征在于,所述晶须的长度为0.2μm至2.0μm,优选为0.5μm至1.5μm。 ! 6.根据权利要求1或2所述的基板,其特征在于,所述晶须的直径为40nm至150nm,优选为50nm至70nm。 ! 7.根据权利要求1或2所述的基材,其特征在于,所述晶须的长度与其直径的比率为5至50,优选为10至30。 8.根据权利要求1或2所述的基板,其特征在于,所述晶须的表面密度为108 / cm 2至1010 / cm 2。 ! 9.根据权利要求1或2所述的基板,其特征在于,所述金属是金。 ! 10.根据权利要求1或2所述的基板,其特征在于,所述含镓氮化物是氮化镓GaN。 ! 11.根据权利要求1或2所述的基板,其特征在于,

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