Method for manufacturing semiconductor chip for micro-electro-mechanical systems structure used in e.g. acceleration sensor, involves depositing seed layer of polycrystalline silicon on lateral regions of arrangement

摘要

A monocrystalline silicon insulating layer (14) is formed on substrate (10) through insulating layer (12). The monocrystalline silicon insulating layer is patterned such that defined lateral area (16) of the layer remains stationary. A buried layer of conductive material is formed in lateral regions of arrangement outside of defined area. A seed layer of polycrystalline silicon is deposited on lateral regions of the arrangement outside of defined area. The silicon is deposited on monocrystalline silicon layer and on seed layer. An independent claim is included for semiconductor chip.