ELECTRONIC MEMORY CELL WITH DOUBLE GRID AND ELECTRONIC MEMORY CELL DEVICE WITH DOUBLE GRID

摘要

Memory cell (100) comprising: - an active zone comprising a channel arranged between a source and a drain, - a first gate (114) disposed on a first portion of the channel, - a portion of a first lateral spacer (128) disposed against a lateral flank of the first gate, a portion of which forms a second gate (134) disposed on a second portion of the channel, one of the two gates forming a memory gate, the memory cell further comprising a portion of a second lateral spacer (133) disposed against a lateral flank of a block (111) disposed on the semiconductor layer, the second lateral spacer being in contact with the first lateral spacer, the first and second lateral spacers being composed of similar materials, said portion of the second lateral spacer forming part of an electrical contact pad (130) electrically connected to the second gate.